Semicond. Physics Quantum Electronics & Optoelectronics, 1998, № 1

ЗМІСТ

The first issue of this journal is devoted to the 80th anniversary of the National Academy of Sciences of Ukraine

Martin P.M., Belyaev A.E., Eaves L. , Main P.C. , Sheard F.W., Ihn T., Henini M.
Capacitance spectroscopy of InAs self-assembled quantum dots

Svechnikov S.V., Kaganovich E.B., Manoilov E.G.
Photosensitive porous silicon based structures

Piskovoi V.N., Strelniker Ya.M.
(M, N)-exponential model in the theory of excitons

Mazur Yu.I.
Strong effect of magnetic field on the edge luminescence line width in diluted magnetic narrow-gap Hg_1-xMn_xTe

Kashirina N.I., Kislyuk V.V., Sheinkman M.K.
Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit

Daweritz L., Grahn H., Hey R., Jenichen B., Ploog K., Korbutyak D., Krylyuk S., Kryuchenko Yu., Litovchenko V.
Characteristics of interface corrugations in short-period GaAs/AlAs superlattices

Kochelap V.A., Bonilla L.L., Velasco C.A.
Switching-on and -off dynamics of MQW structures with bistable electro-optical absorption

Blonskiy I.V., Lev B.I., Valakh M.Ya.
Multimodal size distribution of Si nanoclusters in SiO₂as manifestation of interaction in the space of sizes

Torchinskaya T.V., Korsunskaya N.E., Khomenkova L.Yu., Dzhumaev B.R., Many A., Goldstein Y., Savir E.
Effect of the desorption process on photoluminescence excitation spectra of porous silicon

Gorbach T.Ya., Holiney R.Yu., Matiyuk I.M., Matveeva L.A., Svechnikov S.V., Venger E.F.
Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments

Garsia-Garsia E., Yanez-Limon M., Vorobiev Y., Espinoza-Beltran F., Gonzalez-Hernandez J.
Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆doped with Se and Ni

Vlasenko O.I., Babentsov V.M., Vlasenko Z.K., Ponedilok A.V., Kurilo I.V., Rudyj I.O., Kremenitskiy V.V.
Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties

Alexeyev A.N., Fadeyeva T.A., Volyar A.V., Soskin M.S.
Optical vortices and the flow of their angular momentum in a multimode fiber

Gribnikov Z.S., Gordion I.M., Mitin V.V.
Switching waves in asymmetric thyristor-like structures for incomplete gate turn off regime

Lysenko V.S., Rudenko T.E., Nazarov A.N., Kilchitskaya V.I., Rudenko A.N., Limanov A.B., Colinge J.-P.
High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

Boutry-Forveille A., Ballutaud D., Nazarov A.N.
SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

Oleksenko P.Ph., Sukach G.A., Smertenko P.S., Vlaskina S.I., Bogoslovskaya A.B., Spichak I.O., Shin D.H.
Electrophysical сharacteristics of LEDs based on GaN epitaxial films

Salkov E.A.
Microscopic parameters of a stochastic system and variance of physical quantity (ideal gas, electric current, thermal radiation of a black body)

Snopok B.A., Kostyukevych K.V., Rengevych O.V., Shirshov Yu.M., Venger E.F., Kolesnikova I.N., Lugovskoi E.V.
A biosensor approach to probe the structure and function of the adsorbed proteins: fibrinogen at the gold surface