Tight-binding study of nonmagnetic-defect-induced magnetism in graphene
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Анотація
This review describes a study of nonmagnetic-defect-induced magnetism of graphene on the basis of a
tight-binding model. A vacancy induces a quasilocalized impurity state at the chemical potential around itself,
and it leads to formation of local magnetic moments. Connection between a quasilocalized state around
a vacancy and the edge localized states near a zigzag edge is studied in detail. Magnetism associated with
many vacancies and edge structures is also reviewed. Some new results of magnetism associated with many
vacancies are presented.
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Теми
Graphene and graphite multilayers
Цитування
Tight-binding study of nonmagnetic-defect-induced magnetism in graphene
/ H. Kumazaki, D.S. Hirashima
// Физика низких температур. — 2008. — Т. 34, № 10. — С. 1025-1032. — Бібліогр.: 43 назв. — англ.