Tight-binding study of nonmagnetic-defect-induced magnetism in graphene

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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України

Анотація

This review describes a study of nonmagnetic-defect-induced magnetism of graphene on the basis of a tight-binding model. A vacancy induces a quasilocalized impurity state at the chemical potential around itself, and it leads to formation of local magnetic moments. Connection between a quasilocalized state around a vacancy and the edge localized states near a zigzag edge is studied in detail. Magnetism associated with many vacancies and edge structures is also reviewed. Some new results of magnetism associated with many vacancies are presented.

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Теми

Graphene and graphite multilayers

Цитування

Tight-binding study of nonmagnetic-defect-induced magnetism in graphene / H. Kumazaki, D.S. Hirashima // Физика низких температур. — 2008. — Т. 34, № 10. — С. 1025-1032. — Бібліогр.: 43 назв. — англ.

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