Magnetic field-stimulated change of photovoltage in solar silicon crystals
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
The effect of static magnetic field (B = 0.17 T) on composition of defects and
lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this
work was the character of changes in electrical characteristic of solar silicon. These
changes are dependent on the time elapsed after the magnetic treatment. The results have
been discussed in terms of spin-dependent processes in the subsystem of structural
defects.
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Magnetic field-stimulated change of photovoltage
in solar silicon crystals / O.O. Korotchenkov, L.P. Steblenko, A.O. Podolyan, D.V. Kalinichenko, P.O. Tesel’ko, V.M. Kravchenko, N.V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 72-75. — Бібліогр.: 10 назв. — англ.