Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

Анотація

Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both structures. For multilayer structure a low-frequency Raman spectrum was obtained due to the scattering on folded acoustical phonons. The experimental values of the peaks are compared with those derived theoretically.

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Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs / V.N. Dzhagan, Z.F. Krasil'nik, P.M. Lytvyn, A.V. Novikov, M.Ya. Valakh, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 164-168. — Бібліогр.: 20 назв. — англ.

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