Graded-gap AlInN Gunn diodes
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
The paper deals with the numerical simulation of Gunn diodes operation based
on the graded-gap AlInN. We have obtained the output characteristics of diodes with
different cathode contacts in a wide range of frequencies. Harmonic and biharmonic
modes of operation have been considered. Cutoff frequency and minimum length of the
active region have been estimated. Performances of graded-gap AlInN diodes are
compared with the performances of InN and AlN diodes
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Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ.