Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures

Abstract

We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the generation centers in the bulk.