Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
In this paper we present experimental results of the studying degradation
processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder
phosphors and theoretical simulation of energy parameters for the phosphor. Energy band
diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor
junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and
Zn-Cu bonds have been calculated by the method based on a linear combination of
atomic orbitals and pseudo-potential. Time dependences of brightness have been found to
adequately fit a two-component exponential dependence. The first part of the exponential
curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second
one to the diffusion of Cu in ZnS matrix.
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Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ.