Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions

Abstract

The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid solutions under reproducible hydrodynamic conditions has been studied. The equal dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the semiconductor dissolution process have been determined. Regions of polishing, selective and unpolishing solutions in the mentioned system have been ascertained. The influence of Mn concentrations in solid solutions on the etching rate and quality has been established.