Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined.

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Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ.

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