The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also ascertained, that waves belonging to the nearby diffraction orders differ from each other by π/2 in their phase.

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The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ.

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