Correlated band structure of electron-doped cuprate materials
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Анотація
We present a numerical study of the doping dependence of the spectral function of the n-type
cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional
theory, the spectral function of the electron-doped two-dimensional Hubbard model is
calculated. The model includes the next-nearest neighbor electronic hopping amplitude t' and a
fixed on-site interaction U - 8t at half-filling and doping levels ranging from x - 0.077 to x - 0.20 .
Our results support the fact that a comprehensive description of the single-particle spectrum of
electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast
to previous weak-coupling approaches, we obtain a consistent description of the ARPES
experiments without the need to (artificially) introduce a doping-dependent on-site interaction U.
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Теми
Strong Correlations
Цитування
Correlated band structure of electron-doped cuprate
materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ.