Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics

Abstract

As a result of research of polishing single crystal materials it is shown that the material removal rate of the processed material depends on the volumetric wear coefficient and friction path length of element of the processed surface on the surface of lapping. It is found that the polishing flat surfaces of the optoelectronic elements of single crystal silicon carbide is advantageously carried out by using polishing slurry of the powders based on MAX-phase Ti₃AlC₂ and colloidal nanoparticulate systems, and single crystal sapphire - using suspensions of diamond micron powders of cubic boron nitride powders and MAX-phase Ti₃AlC₂. Nano-polishing surfaces of elements of the single crystal sapphire should be performed using the colloidal nanoparticulate systems. It is also shown that the polishing efficiency of the single crystal silicon carbide and sapphire is inversely proportional to the transfer energy, the maximum value of which corresponds to a the minimum roughness.