Manufacture of sapphire ribbons with low dislocation density

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НТК «Інститут монокристалів» НАН України

Анотація

Uniform thermal field with the axial temperature gradient of 11.6 K/cm was formed in a cylindrical heater. There were obtained 15x85x300 mm3 sapphire ribbons with dislocation density up to 103 cm-2. The dislocation density of sapphire ribbons at the axial temperature gradient of 11.6 K/cm was found to be comparable with the one in the crystals obtained by the Czochralski and Kyropoulos methods.

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Technology

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Manufacture of sapphire ribbons with low dislocation density / R.I. Safronov, L.A. Litvinov, A.V. Voloshin, V.F. Bochkov // Functional Materials. — 2016. — Т. 23, № 1. — С. 88-91. — Бібліогр.: 9 назв. — англ.

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