Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

Abstract

We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.