Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar

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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України

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Spatially separated stable charge centers – trapped electrons and self-trapped holes – are generated in Ar cryocrystals by a low-energy electron beam. A combination of the cathodoluminescence and photon-stimulated luminescence methods has been used to probe recombination reactions. Photon-stimulated vacuum ultraviolet intrinsic recombination luminescence from pre-irradiated solid Ar was detected for the first time. The 1.96 eV laser light has been demonstrated to release electrons from their traps that gives rise to the well-known M-band at 9.8 eV. Additional information on the photostability of charge centers at low temperatures has been obtained.

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Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar / G.B. Gumenchuk, M.A. Bludov, A.G. Belov // Физика низких температур. — 2005. — Т. 31, № 2. — С. 237-240. — Бібліогр.: 24 назв. — англ.

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