Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Abstract

The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.