Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

Abstract

Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.