Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presence in the liquid phase of the ATe, A₂Te₃, ATe₂, A₂Te (A = Cd, Hg) and free Te, Cd, Hg atoms. In accordance with the model of polyassociative solutions the data on p–T–x equilibrium in the region of quasi-binary cross-section of Cd-Hg-Te system structural diagram were obtained. It was shown, that the mixing effects in the three-component liquid phase are satisfactorily described by the formation of CdHgTe and CdHgTe₃ associates. The good correspondence of the calculations and experiment in the high temperature part of the Cd-Hg-Te system structural diagram was achieved.
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Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
/ Moskvin P.P., Rashkovetskiy L.V., Stronski A.V. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 81-85. — Бібліогр.: 12 назв. — англ.