Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

Abstract

The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.