Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Анотація
We analyzed carefully the experimental kinetics of the low-temperature diffusion-controlled F, H center recombination in a series of irradiated alkali halides and extracted the migration energies and pre-exponential parameters for the hole H centers. The migration energy for the complementary electronic F centers in NaCl was obtained from the colloid formation kinetics observed above room temperature. The obtained parameters were compared with data available from the literature.
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Теми
Low-Temperature Radiation Effects in Wide Gap Materials
Цитування
Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals / V.N. Kuzovkov, A.I. Popov, E.A. Kotomin, A.M. Moskina, E. Vasil'chenko, A. Lushchik // Физика низких температур. — 2016. — Т. 42, № 7. — С. 748-755. — Бібліогр.: 59 назв. — англ.