Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
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НТК «Інститут монокристалів» НАН України
Анотація
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed.
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Characterization and properties
Цитування
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.