Effect of an ac electric field on weak electron localization in Bi films
Завантаження...
Дата
Назва журналу
Номер ISSN
Назва тому
Видавець
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Анотація
We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.
Опис
Теми
По всем тематикам журнала
Цитування
Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu. Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.