Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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In this work, the influence of weak magnetic field on structure-dependent
properties of micro-structured Si was determined. The researches of EPR-spectra
inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe
that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the
determined spectral line decreases twice after magnetic processing. The observed redox
processes and evolution of defect structure are interpreted as the influence of magnetic
field on micro-structured Si. Calculations made using the data of X-ray diffractometric
researches showed an essential decrease of internal strains and respective increase of the
lattice parameter in micro-structured Si samples after magnetic processing in the weak
magnetic field.
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Changes in the state of paramagnetic centers and lattice parameter
of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.