Acoustic-emission method for controlling the defect-formation process in light-emitting structures
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
Сomplex researches of light-emitting structures based on А₃В₅ compounds
have been carried out. It has been shown that at current loading exceeding the acousticemission
threshold, there arises a change in the electroluminescence intensity, fluctuation
of current and light. It has been ascertained that natural ageing leads to a general
improvement of some practically important parameters of light-emitting structures, in
particular to increase of maximal admissible currents and reliability.
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Acoustic-emission method for controlling the defect-formation
process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ.