Complex destruction of near-surface silicon layers of Si-SiO₂ structure

Abstract

The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses depends not only on parameters of silicon dioxide and silicon but on presence of initial defects in silicon. We have proposed the defect formation mechanism of near-surface layers in Si-SiO₂ structure, and it has been revealed the influence of impurities on this process.