Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
dc.contributor.author | Okhrimenko, O.B. | |
dc.date.accessioned | 2017-05-30T06:05:25Z | |
dc.date.available | 2017-05-30T06:05:25Z | |
dc.date.issued | 2014 | |
dc.description.abstract | The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is shown that laser annealing on the above structures leads to changes in spectra of RS and optical transmission that can be explained within the critical action model. The value of critical action of laser radiation is determined for the structures studied. | uk_UA |
dc.description.sponsorship | The author is indebted to Dr. Sci. Prof. V.P. Kladko and Dr. Sci. V.V. Strelchuk for their interest in this work and valuable discussions. | uk_UA |
dc.identifier.citation | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 71.20.Nr, 78.40.Fy | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118373 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing | uk_UA |
dc.type | Article | uk_UA |
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