Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing

dc.contributor.authorOkhrimenko, O.B.
dc.date.accessioned2017-05-30T06:05:25Z
dc.date.available2017-05-30T06:05:25Z
dc.date.issued2014
dc.description.abstractThe experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is shown that laser annealing on the above structures leads to changes in spectra of RS and optical transmission that can be explained within the critical action model. The value of critical action of laser radiation is determined for the structures studied.uk_UA
dc.description.sponsorshipThe author is indebted to Dr. Sci. Prof. V.P. Kladko and Dr. Sci. V.V. Strelchuk for their interest in this work and valuable discussions.uk_UA
dc.identifier.citationVariation of optical parameters of multilayer structures with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 71.20.Nr, 78.40.Fy
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118373
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleVariation of optical parameters of multilayer structures with thin silicon layers at laser annealinguk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
14-Okhrimenko.pdf
Розмір:
1.84 MB
Формат:
Adobe Portable Document Format

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: