Influence of gas adsorption on the impedance of porous GaAs
dc.contributor.author | Milovanov, Y.S. | |
dc.contributor.author | Gavrilchenko, I.V. | |
dc.contributor.author | Kondratenko, S.V. | |
dc.contributor.author | Oksanich, A.P. | |
dc.contributor.author | Pritchin, S.E. | |
dc.contributor.author | Kogdas, M.G. | |
dc.date.accessioned | 2018-06-16T15:08:19Z | |
dc.date.available | 2018-06-16T15:08:19Z | |
dc.date.issued | 2017 | |
dc.description.abstract | Porous GaAs was formed electrochemically on n-type GaAs in a HF:C₂H₅OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance and the adsorption influence of ethanol and acetone vapor on the charge transfer were examined. | uk_UA |
dc.identifier.citation | Influence of gas adsorption on the impedance of porous GaAs / Y.S. Milovanov, I.V. Gavrilchenko, S.V. Kondratenko, A.P. Oksanich, S.E. Pritchin, M.G. Kogdas // Functional Materials. — 2017. — Т. 24, № 1. — С. 52-55. — Бібліогр.: 20 назв. — англ. | uk_UA |
dc.identifier.issn | 1027-5495 | |
dc.identifier.other | DOI: https://doi.org/10.15407/fm24.01.052 | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/136693 | |
dc.language.iso | en | uk_UA |
dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
dc.relation.ispartof | Functional Materials | |
dc.status | published earlier | uk_UA |
dc.subject | Characterization and properties | uk_UA |
dc.title | Influence of gas adsorption on the impedance of porous GaAs | uk_UA |
dc.type | Article | uk_UA |
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