Stacking Faults in the single crystals
| dc.contributor.author | Mihir M. Vora | |
| dc.contributor.author | Aditya M. Vora | |
| dc.date.accessioned | 2017-05-31T19:14:24Z | |
| dc.date.available | 2017-05-31T19:14:24Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal. | uk_UA |
| dc.identifier.citation | Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.10.-i, 61.72.-y, 61.72.Dd, Nn | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118848 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Stacking Faults in the single crystals | uk_UA |
| dc.type | Article | uk_UA |
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