Saturation of optical absorption in CdS single crystals
dc.contributor.author | Malysh, N. I. | |
dc.contributor.author | Kunets, V. P. | |
dc.contributor.author | Valiukh, S. I. | |
dc.contributor.author | Kunets, Vas. P. | |
dc.date.accessioned | 2017-05-27T09:32:03Z | |
dc.date.available | 2017-05-27T09:32:03Z | |
dc.date.issued | 1999 | |
dc.description.abstract | The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the absorption edge has exponential character both at low and high pumping intensities. The calculation method of nonlinear transmission dependencies was proposed. Using the known formulae one can minimize the value of root mean square deviation of the measured data from the calculated ones in the whole region of the light intensities. | uk_UA |
dc.identifier.citation | Saturation of optical absorption in CdS single crystals / N. I. Malysh, V. P. Kunets, S. I. Valiukh, Vas. P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 31-34. — Бібліогр.: 9 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 78.66.H | |
dc.identifier.udc | 535.34,621.315.592 | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117859 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Saturation of optical absorption in CdS single crystals | uk_UA |
dc.type | Article | uk_UA |
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