The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure

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dc.contributor.authorBerrah, S.
dc.contributor.authorAbid, H.
dc.contributor.authorBoukortt, A.
dc.date.accessioned2017-06-14T10:10:12Z
dc.date.available2017-06-14T10:10:12Z
dc.date.issued2006
dc.description.abstractNumerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values.uk_UA
dc.description.sponsorshipWe would like to acknowledge S.Q. Wang from Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese (republic of China) and K. Louzazna from university of Béjaia (Algéria) for their help.uk_UA
dc.identifier.citationThe first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 71.20.Mq, 78.40.Fy
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121424
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressureuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2