Optical and scintillation properties of CsI:In crystals

Завантаження...
Ескіз

Дата

Назва журналу

Номер ISSN

Назва тому

Видавець

НТК «Інститут монокристалів» НАН України

Анотація

The work is dedicated to study of optical and scintillation properties of CsI:In crystals. Using the Bridgeman method a concentration row of CsI:In single crystals was grown with the dopant content from 10⁻⁴ to 10⁻¹ mol. %. The segregation coefficient of In in CsI was estimated to be ~0.15. In CsI:In luminescence spectra one symmetric band is observed, peaking around 545 nm, with FWHM of 0.46 eV. Under intracenter excitation 1.9 μ s exponential decay was observed. The light yield under gamma excitation of ¹³⁷Cs isotope (662 keV), measured with a shaping time of 10 μ s, was 27 000 photons/MeV. The radio-luminescence yield of CsI:In , measured by the current mode method, approached to that of CsI:Tl . Probably, this difference is connected with the presence of a stronger afterglow in CsI:In crystals.

Опис

Теми

Characterization and properties

Цитування

Optical and scintillation properties of CsI:In crystals / S. Gridin, N. Shiran, M. Moszynski, A. Belsky, A. Syntfeld-Kazuch, V. Tarasov, A. Gektin // Functional Materials. — 2013. — Т. 20, № 3. — С. 284-289. — Бібліогр.: 14 назв. — англ.

item.page.endorsement

item.page.review

item.page.supplemented

item.page.referenced