Peculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO₂/Si-substrate structures in pyroelectric response investigations

dc.contributor.authorBravina, S.L.
dc.contributor.authorCattan, E.
dc.contributor.authorMorozovsky, N.V.
dc.contributor.authorRemiens, D.
dc.date.accessioned2017-06-04T15:58:22Z
dc.date.available2017-06-04T15:58:22Z
dc.date.issued2004
dc.description.abstractBy RF magnetron sputtering method the Pt/PZT-film/Pt:Ti-sublayer/SiO₂/Si-substrate structures were prepared and pyroelectric response amplitude and phase behaviour under external voltage application was investigated by photopyroelectric modulation method. The results of investigation of pyroelectric response – external voltage loops of polarization reversal, pyroelectric response – voltage poling curves and pyroelectric response – time repolarization curves and also dynamic current-voltage characteristics of Pt/PZT/Pt:Ti/SiO₂/Si-substrate structures are presented. From variation of pyroelectric response in the current and voltage modes the capacity-voltage loops of polarization reversal and poling curves were derived. From asymmetric pyroelectric response – time repolarization curves the voltage behaviour of characteristic times of zero response and saturation was analyzed. Observed transformations of current-voltage characteristics display the considerable voltage and time dependent variation of charge transfer conditions. The performed investigation has shown the strong correlation between the poling pyroelectric and so ferroelectric and electrical asymmetries. Presented data on the polar and time asymmetry of the conditions of polarization reversal are discussed in the terms of influence of dynamics of space charge asymmetry on pinning conditions under the different polarity of applied voltage in the course of polarization reversal.uk_UA
dc.description.sponsorshipAuthors gratefully acknowledge Ministry of Science of France and the University of Valenciennes for financial support.uk_UA
dc.identifier.citationPeculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO₂/Si-substrate structures in pyroelectric response investigations / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 263-271. — Бібліогр.: 27 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 78.20.-e
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119121
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePeculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO₂/Si-substrate structures in pyroelectric response investigationsuk_UA
dc.typeArticleuk_UA

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