Modelling vacancy microvoid formation in dislocation-free silicon single crystals

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dc.contributor.authorTalanin, V.I.
dc.contributor.authorTalanin, I.E.
dc.contributor.authorKoryagin, S.A.
dc.contributor.authorSemikina, M.Yu.
dc.date.accessioned2017-06-15T03:44:16Z
dc.date.available2017-06-15T03:44:16Z
dc.date.issued2006
dc.description.abstractAn alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown.uk_UA
dc.description.sponsorshipThis scientific work was made by the budgetary funds of Ministry of Education and Science of Ukraine as the grant of the President of Ukraine.uk_UA
dc.identifier.citationModelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.72Bb, 61.72.Jj, 61.72.Yx
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121641
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleModelling vacancy microvoid formation in dislocation-free silicon single crystalsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 4