On origin of room temperature ferromagnetism in wide gap semiconductors

dc.contributor.authorKorbecka, Anna
dc.contributor.authorMajewski, Jacek A.
dc.date.accessioned2017-05-15T05:01:48Z
dc.date.available2017-05-15T05:01:48Z
dc.date.issued2009
dc.description.abstractThe emerging field of semiconductor spintronics would be dramatically boosted if a semiconductor exhibiting room-temperature ferromagnetism could be found. Here, we discuss the recent stage of the research, paying particular attention to the understanding of observed room temperature ferromagnetism in wide band semiconductors, GaMnN and ZnMnO. Since the spinodal decomposition has been observed in these structures, we consider the possibilities to influence density fluctuations of the alloys to obtain ferromagnetic semiconductors with required functionalities. We contrast these compounds with (In,Mn)As and (Ga,Mn)As, where the ferromagnetism is well understood, albeit well below room temperature.uk_UA
dc.description.sponsorshipThis work was supported by the Polish Ministry of Science and High Education (project N202 026 32/0707) and partly by the EC project NANOSPIN (FP6-2002-IST-015728).uk_UA
dc.identifier.citationOn origin of room temperature ferromagnetism in wide gap semiconductors / Anna Korbecka, Jacek A. Majewski // Физика низких температур. — 2009. — Т. 35, № 1. — С. 70-74. — Бібліогр.: 45 назв. — англ.uk_UA
dc.identifier.otherPACS: 75.50.Pp
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/116765
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectXVII Уральская международная зимняя школа по физике полупроводниковuk_UA
dc.titleOn origin of room temperature ferromagnetism in wide gap semiconductorsuk_UA
dc.typeArticleuk_UA

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