Influence of structural defects on photoconductivity of zinc diphosphide
| dc.contributor.author | Kudin, A.P. | |
| dc.contributor.author | Kuts, V.I. | |
| dc.contributor.author | Litovchenko, P.G. | |
| dc.contributor.author | Pinkovska, M.B. | |
| dc.contributor.author | Tartachnyk, V.P. | |
| dc.date.accessioned | 2017-06-05T17:08:56Z | |
| dc.date.available | 2017-06-05T17:08:56Z | |
| dc.date.issued | 2001 | |
| dc.description.abstract | Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C. | uk_UA |
| dc.identifier.citation | Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.72 | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/119264 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Influence of structural defects on photoconductivity of zinc diphosphide | uk_UA |
| dc.type | Article | uk_UA |
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