Electron emission modulation effects in micro-size structures
| dc.contributor.author | Hartnagel, H. | |
| dc.date.accessioned | 2017-05-27T16:49:34Z | |
| dc.date.available | 2017-05-27T16:49:34Z | |
| dc.date.issued | 2003 | |
| dc.description.abstract | A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials. | uk_UA |
| dc.description.sponsorship | This work was supported in part by the DLR (BMBF) in connection with German-Ukrainian projects (UKR 01/053) entitled "Electron Emission Properties of the DLC Films and C-Nanotubes" and in part by the "Deutsche Forschungsgemeinschafit (DFG)" in connecntion with a special research project (SFB 241) on innovative mechatronics. | uk_UA |
| dc.identifier.citation | Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 79.70.+q | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117943 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Electron emission modulation effects in micro-size structures | uk_UA |
| dc.type | Article | uk_UA |
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