Analysis of properties of optical carriers after long-term storage

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dc.contributor.authorPetrov, V.V.
dc.contributor.authorKryuchyn, A.A.
dc.contributor.authorGorbov, I.V.
dc.contributor.authorKossko, I.O.
dc.contributor.authorKostyukevych, S.O.
dc.date.accessioned2017-05-31T19:06:30Z
dc.date.available2017-05-31T19:06:30Z
dc.date.issued2009
dc.description.abstractPerformed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical carriers of the WORM type after 25-year storage. It has been shown that their micro-relief structure formed by using focused laser radiation on thin films of chalcogenide vitreous semiconductors had not been practically changed after storing them for the above mentioned period in non-heated areas.uk_UA
dc.description.sponsorshipThe authors are very grateful to the specialists from the Institute for information recording problems, NAS of Ukraine, who assisted in optical information recording on these optical carriers and organized their long-term storage, as well as to the specialists from V. Lashkaryov Institute of Semiconductor Physics for the performed studying the pit profiles by using the scanning tunnel microscopeuk_UA
dc.identifier.citationAnalysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 42.79.Vb, 78.66.Jg
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118843
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAnalysis of properties of optical carriers after long-term storageuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4