High-density data recording via laser thermo-lithography and ion-beam etching

dc.contributor.authorGorbov, I.V.
dc.contributor.authorKryuchyn, A.A.
dc.contributor.authorGrytsenko, K.P.
dc.contributor.authorManko, D.Yu.
dc.contributor.authorBorodin, Yu.O.
dc.date.accessioned2017-05-30T05:33:14Z
dc.date.available2017-05-30T05:33:14Z
dc.date.issued2014
dc.description.abstractPits 250 – 300 - nm wide were obtained on the surface of thin organic nanocomposite film using master-disc laser-burning station with 405 nm laser beam focused by 0.85 NA lens. The film with obtained pits was used as a mask for subsequent reactive ion-beam etching of glass substrate. Finally, 150 – 200-nm pits were performed on the substrate surface. Nanocomposite films were based on organic positive photoresist with a dye inclusions. This dye is characterized by wide absorption band within the spectral region 390–410 nm and can be evaporated by laser irradiation with the wavelength 405 nmuk_UA
dc.identifier.citationHigh-density data recording via laser thermo-lithography and ion-beam etching / I.V. Gorbov, A.A. Kryuchyn, K.P. Grytsenko, D.Yu. Manko, Yu.O. Borodin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 52-55. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 81.16.Nd
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118350
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleHigh-density data recording via laser thermo-lithography and ion-beam etchinguk_UA
dc.typeArticleuk_UA

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