High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

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dc.contributor.authorKrukovsky, S.I.
dc.contributor.authorZayachuk, D.M.
dc.contributor.authorRybak, O.V.
dc.contributor.authorMryhin, I.O.
dc.date.accessioned2017-05-27T16:48:08Z
dc.date.available2017-05-27T16:48:08Z
dc.date.issued2003
dc.description.abstractInfluence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice.uk_UA
dc.identifier.citationHigh-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 73.61.Ey
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117942
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleHigh-resistance low-doped GaAs and AlGaAs layers obtained by LPEuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1