The prospects of use of silicon photodiodes for registration alpha, beta radiation and neutrons

dc.contributor.authorVoronkin, E.F.
dc.contributor.authorGrinyov, B.V.
dc.date.accessioned2017-06-14T14:13:16Z
dc.date.available2017-06-14T14:13:16Z
dc.date.issued2016
dc.description.abstractThe purpose of the current work is an investigation of possibility of use of silicon photodiodes for registration alpha, beta radiations and neutrons. Electronic physical properties of the photodiodes which provide spectrometer characteristics of semiconductor detectors of nuclear radiations, such as: electronic noise, thickness of a sensitive layer, thickness of a surface not sensitive layer, are analyzed. It is shown that power permission for alpha particles is equal to 10-25 keV that which corresponds to resolution of the best surface-barrier semiconductor detectors. Also photodiodes can be used for measurement of a stream of beta particles, in spectrometry till energy value of 300 keV and for measurement of streams thermal and the fast neutrons with efficiency of about 1 %. Operational characteristics of the photodiodes allow use them in industrial platforms of nuclear objects and in the field conditions.uk_UA
dc.identifier.citationThe prospects of use of silicon photodiodes for registration alpha, beta radiation and neutrons / E.F. Voronkin, B.V. Grinyov // Functional Materials. — 2016. — Т. 23, № 4. — С. 665-667. — Бібліогр.: 3 назв. — англ.uk_UA
dc.identifier.issn1027-5495
dc.identifier.otherDOI: doi.org/10.15407/fm23.04.665
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121495
dc.language.isoenuk_UA
dc.publisherНТК «Інститут монокристалів» НАН Україниuk_UA
dc.relation.ispartofFunctional Materials
dc.statuspublished earlieruk_UA
dc.subjectDevices and instrumentsuk_UA
dc.titleThe prospects of use of silicon photodiodes for registration alpha, beta radiation and neutronsuk_UA
dc.typeArticleuk_UA

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