The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers

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dc.contributor.authorSolntsev, V.S.
dc.contributor.authorGorbanyuk, T.I.
dc.contributor.authorLitovchenko, V.G.
dc.contributor.authorEvtukh, A.A.
dc.date.accessioned2017-06-03T05:12:45Z
dc.date.available2017-06-03T05:12:45Z
dc.date.issued2008
dc.description.abstractThe adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena.uk_UA
dc.description.sponsorshipThis work was supported by Science and Technology Centre in Ukraine, Project № 3819, by National Academy of science, Project № 51 and № 25- 2008, by Ministry of Science and Еducation, Project № M175-2007.uk_UA
dc.identifier.citationThe influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 07.07.Df, 68.43.Bc, 68.47.Fg
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119080
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layersuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4