Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

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dc.contributor.authorBudzulyak, S.I.
dc.contributor.authorErmakov, V.M.
dc.contributor.authorKyjak, B.R.
dc.contributor.authorKolomoets, V.V.
dc.contributor.authorMachulin, V.F.
dc.contributor.authorNovoselets, M.K.
dc.contributor.authorPanasjuk, L.I.
dc.contributor.authorSus', B.B.
dc.contributor.authorVenger, E.F.
dc.date.accessioned2017-05-27T16:45:47Z
dc.date.available2017-05-27T16:45:47Z
dc.date.issued2003
dc.description.abstractAnalysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.uk_UA
dc.identifier.citationInvestigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 71.30.+h
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117939
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInvestigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystalsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1