Metastable interstitials in CdSe and CdS crystals

dc.contributor.authorBorkovska, L.V.
dc.contributor.authorBulakh, B.M.
dc.contributor.authorKhomenkova, L.Yu.
dc.contributor.authorKorsunska, N.O.
dc.contributor.authorMarkevich, I.V.
dc.date.accessioned2017-05-28T16:40:49Z
dc.date.available2017-05-28T16:40:49Z
dc.date.issued2003
dc.description.abstractAn "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors under heating. The donors are metastable centres that do not display themselves in the equilibrium state and can be revealed only by drift in electric field. The acceptors are shown to be substitutional impurity atoms, acceptor-to-donor transformation occurring due to transition of these atoms from lattice sites to interstitials. Under cooling reverse donor-to-acceptor transition takes place.uk_UA
dc.description.sponsorshipThis work was supported bу National Academу of Sciences of Ukraine, and one author (L.Yu.K.) were supported bу Grant of the President of Ukraine for уoung scientists.uk_UA
dc.identifier.citationMetastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 61.72 Ji; 66.30 Jt; 66.30 Qa
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118082
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleMetastable interstitials in CdSe and CdS crystalsuk_UA
dc.typeArticleuk_UA

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