Integration of LED/SC chips (matrix) in reverse mode with solar energy storage

dc.contributor.authorOsinsky, V.I.
dc.contributor.authorMasol, I.V.
dc.contributor.authorFeldman, I.Kh.
dc.contributor.authorDiagilev, A.V.
dc.contributor.authorSukhovii, N.O.
dc.date.accessioned2017-06-14T17:06:11Z
dc.date.available2017-06-14T17:06:11Z
dc.date.issued2016
dc.description.abstractIn this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has been shown that the atomic content in these microenergetic devices gives large possibilities for energy storage from solar light. The developed technique is promising to make ideal new functional LED, LD and SC with a high quantum efficiency and small leakage. This technology can be realized using Si/A³B⁵ integrated processor technology epitaxy with computer driving.uk_UA
dc.identifier.citationIntegration of LED/SC chips (matrix) in reverse mode with solar energy storage / V.I. Osinsky, I.V. Masol, I. Kh. Feldman, A.V. Diagilev, N.O. Sukhovii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 215-219. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo19.02.215
dc.identifier.otherPACS 73.61.Ey, 85.50.Jb, 88.40.H-
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121576
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleIntegration of LED/SC chips (matrix) in reverse mode with solar energy storageuk_UA
dc.typeArticleuk_UA

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