Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
| dc.contributor.author | Grigorchuk, N. I. | |
| dc.date.accessioned | 2017-05-27T09:30:08Z | |
| dc.date.available | 2017-05-27T09:30:08Z | |
| dc.date.issued | 1999 | |
| dc.description.abstract | Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independent parameter. The obtained analytical expressions allow analyses of the line-shape for different space dimensions of structure depending on bandwidth difference, damping parameter and temperature. | uk_UA |
| dc.identifier.citation | Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 71.35; 71.36; 78.20; S12 | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117858 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands | uk_UA |
| dc.type | Article | uk_UA |
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