Optical approach to analysis of interaction of gallium nitride and weak magnetic fields

dc.contributor.authorRed'ko, R.A.
dc.date.accessioned2017-06-06T14:32:44Z
dc.date.available2017-06-06T14:32:44Z
dc.date.issued2015
dc.description.abstractThe long-term transformations of optical transmittance of GaN epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 10 min) were obtained. Optical measurements were performed in the waverange of 320-1100 nm at 300 K. The method with three layers simulation was proposed for transmittance spectrum fitting. It was found that the treatment results in not only the optical film thickness changing, but probably in its refractive index too. Non-monotonous changes of the optical thickness, which formed interference, were obtained. Interpretation of the experimental results is based on diffusion of point defects after destruction of the metastable complexes from inner boundaries to surfaces of the studied structures.uk_UA
dc.identifier.citationOptical approach to analysis of interaction of gallium nitride and weak magnetic fields / R.A. Red'ko // Functional Materials. — 2015. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1027-5495
dc.identifier.otherDOI: http://dx.doi.org/10.15407/fm22.02.188
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119350
dc.language.isoenuk_UA
dc.publisherНТК «Інститут монокристалів» НАН Україниuk_UA
dc.relation.ispartofFunctional Materials
dc.statuspublished earlieruk_UA
dc.subjectCharacterization and propertiesuk_UA
dc.titleOptical approach to analysis of interaction of gallium nitride and weak magnetic fieldsuk_UA
dc.typeArticleuk_UA

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