Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions

dc.contributor.authorStudenyak, I.P.
dc.contributor.authorNeimet, Yu.Yu.
dc.contributor.authorRati, Y.Y.
dc.contributor.authorBuchuk, M.Yu.
dc.contributor.authorKökényesi, S.
dc.contributor.authorDaróci, L.
dc.contributor.authorBohdan, R.
dc.date.accessioned2017-05-30T14:05:25Z
dc.date.available2017-05-30T14:05:25Z
dc.date.issued2014
dc.description.abstract(Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited upon a quartz substrate by rapid thermal evaporation at temperatures 1050, 1200, and 1350 °C. Structural studies of the as-deposited thin films were carried out by scanning electron microscopy and atomic force microscopy. It is shown that the surfaces of all the films were covered with Ag-rich crystalline micrometer sized cones. The optical transmission spectra for as-deposited thin films were studied at room temperature. The absorption spectra in the region of its exponential behaviour were analyzed, the dispersion dependences of refractive index as well as their variation depending on evaporation temperature were investigated.uk_UA
dc.description.sponsorshipThe authors are grateful to the TAMOP Grant (TAMOP 4.2.2.A-11/1/KONV-2012-0036 project) which is cofinanced by the European Union and European Social Fund. Yuriy Neimet (contract number 51301014) is strongly grateful to the International Visegrad Fund scholarship for the funding of the project.uk_UA
dc.identifier.citationStructural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions / I.P. Studenyak, Yu.Yu. Neimet, Y.Y. Rati, M.Yu. Buchuk, S. Kokenyesi, L. Daroci, R. Bohdan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 232-236. — Бібліогр.: 20 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.40.Ha, 77.80.Bh
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118484
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleStructural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditionsuk_UA
dc.typeArticleuk_UA

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