Alloy scattering in quantum well wire structures of semiconductor ternaries

dc.contributor.authorIbragimov, G.B.
dc.date.accessioned2017-06-14T07:38:35Z
dc.date.available2017-06-14T07:38:35Z
dc.date.issued2002
dc.description.abstractWe studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility.uk_UA
dc.description.sponsorshipThe author would like to thank М.I. Aliev, В.М. Askerov and F.М. Gashimzade for helpful discussions.uk_UA
dc.identifier.citationAlloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 72.10.-d, 73.63.Hs
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121340
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAlloy scattering in quantum well wire structures of semiconductor ternariesuk_UA
dc.typeArticleuk_UA

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