Heat flux effect on photoenhanced and dark silver motion in a thin As₂S₃ layer

dc.contributor.authorKudryavtsev, A.A.
dc.contributor.authorMichailovskaya, E.V.
dc.date.accessioned2017-06-13T16:52:35Z
dc.date.available2017-06-13T16:52:35Z
dc.date.issued2000
dc.description.abstractThe influence of a heat flux on the rate of photoenhanced and dark Ag transfer in the lightsensitive thin layer As₂S₃-Ag structure was investigated. It was found that the Ag flux increased when a heat flux had the same direction and fell down when the heat flux had an opposite direction. The changes of Ag flux were proportional to a power of the heat flux caused by some temperature difference on the structure surfaces. Coupling between Ag and heat fluxes was described phenomenologically using a generalized mass transfer equation, but the obtained results did not enable to deduce an explicit micromechanism of such interaction. Tentatively, a phonon drag mechanism seems to be more preferable among the known ones, when explaining the Soret effect in this structure.uk_UA
dc.description.sponsorshipAuthors express their sincere gratitude to Dr. T.A. Kydykina and Prof. I.Z. Indutnyi for fruitful discussions of obtained results.uk_UA
dc.identifier.citationHeat flux effect on photoenhanced and dark silver motion in a thin As₂S₃ layer / A.A. Kudryavtsev, E.V. Michailovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 469-474. — Бібліогр.: 12 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 72.20,73.50,73.61
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121210
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleHeat flux effect on photoenhanced and dark silver motion in a thin As₂S₃ layeruk_UA
dc.typeArticleuk_UA

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