Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge

dc.contributor.authorDmitruk, N.L.
dc.contributor.authorBorkovskaya, O.Yu.
dc.contributor.authorHavrylenko, T.S.
dc.contributor.authorNaumenko, D.O.
dc.contributor.authorPetrik, P.
dc.contributor.authorMeza-Laguna, V.
dc.contributor.authorBasiuk, E.V.
dc.date.accessioned2017-05-29T13:30:42Z
dc.date.available2017-05-29T13:30:42Z
dc.date.issued2010
dc.description.abstractFullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8- dithiol (DT). These chemically cross-linked C₆₀ films are capable of stable binding the Ag or Au nanoclusters. Optical properties of the obtained nanostructured hybrid films were investigated by both reflectance spectroscopy and spectral ellipsometry within the spectral range 1.55 to 5.0 eV at various angles of incidence. From the spectral dependences of the extinction coefficient in the region of optical absorption edge, the physical nature of the fundamental allowed direct band-gap transitions between HOMOLUMO states Eg, the optical absorption edge near the intrinsic transition Eo, and exponential tail of the density-of-states caused by defects have been determined. Influence of chemical modification and decoration of metal nanoparticles on the above mentioned parameters has been analyzed.uk_UA
dc.description.sponsorshipFinancial support from the National Autonomous University of Mexico (grant DGAPA IN 103009) and from the National Council of Science and Technology of Mexico (grant CONACYT 56420) is greatly appreciated. V. M.-L. is grateful to DGAPA for a postdoctoral fellowship.uk_UA
dc.identifier.citationEffect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge / N.L. Dmitruk, O.Yu. Borkovskaya, T.S. Havrylenko, D.O. Naumenko, P. Petrik, V. Meza-Laguna, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.40.Ri
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118234
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleEffect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edgeuk_UA
dc.typeArticleuk_UA

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